TY - JOUR AB - We report the development of indium oxide (In2O3) transistors via a singlestep laser-induced photochemical conversion process of a sol-gel metal oxideprecursor. Through careful optimization of the laser annealing conditions wedemonstrated successful conversion of the precursor to In2O3 and its subsequentimplementation in n-channel transistors with electron mobility up to 13 cm2/Vs.Importantly, the process does not require thermal annealing making itcompatible with temperature sensitive materials such as plastic. On the otherhand, the spatial conversion/densification of the sol-gel layer eliminatesadditional process steps associated with semiconductor patterning and hencesignificantly reduces fabrication complexity and cost. Our work demonstratesunambiguously that laser-induced photochemical conversion of sol-gel metaloxide precursors can be rapid and compatible with large-area electronicsmanufacturing. AU - Dellis,S AU - Isakov,I AU - Kalfagiannis,N AU - Tetzner,K AU - Anthopoulos,TD AU - Koutsogeorgis,DC DO - 10.1039/c7tc00169j PY - 2017/// SN - 2050-7534 TI - Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors T2 - Journal of Materials Chemistry C UR - http://dx.doi.org/10.1039/c7tc00169j UR - http://arxiv.org/abs/1701.00859v1 ER -