TY - JOUR AB - This paper reports the controlled growth of atomically sharp In2O3/ZnO and In2O3/Li-doped ZnO (In2O3/Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2O3/ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2O3/Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2O3/Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated. AU - Khim,D AU - Lin,Y-H AU - Nam,S AU - Faber,H AU - Tetzner,K AU - Li,R AU - Zhang,Q AU - Li,J AU - Zhang,X AU - Anthopoulos,TD DO - 10.1002/adma.201605837 PY - 2017/// SN - 0935-9648 TI - Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution T2 - Advanced Materials UR - http://dx.doi.org/10.1002/adma.201605837 UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000401170600011&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202 UR - http://hdl.handle.net/10044/1/49001 VL - 29 ER -