Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon - art. no. 101114 - Lynch,SA; Townsend,P; Matmon,G; Paul,DJ; Bain,M; Gamble,HS; Zhang,J; Ikonic,Z; Kelsall,RW; Harrison,P (APPLIED PHYSICS LETTERS, 2005)