Electron beam lithography is a key process for rapid versatile prototyping at the cutting-edge of science. The electron beam changes the solubility of the resist, enabling selective removal of either the exposed, or non-exposed regions of the resist by immersing it in a solvent (developing). Therefore, very small structures can be created in the resist that can subsequently be transferred to the substrate material or deposited materials. An electron beam lithography system for research applications is very commonly converted from an electron microscope using a reasonable low-cost patterning module. Such systems consist of thermal field emission electron sources, electrostatic and magnetic lenses for long time stable writing. Both functions of lithography and conventional scanning electron microscopy can be done with the system.

The Raith e-Line tool is a 30 keV system, capable of large area patterning with minimum achieva-ble feature size of ~20 nm (~10 nm gaps).

Specifications
  
 Accelerating Voltage   0.5-30kV
 Beam Waist  sub 1.6nm
 Minimum Grating Periodicity  40nm
 Minimum Linewidth (HSQ)  8nm
Overlay Accuracy 40nm
Summary of the table's contents


Sample preparation can be carried out in the Laminar flow hood and fume cabinet containing spin coater, hot plate, ultrasonic bath, solvents (Acetone, IPA, IMBK).

Raith e_LiNE Electron Beam Lithography System
Raith e_LiNE Electron Beam Lithography System