@article{Amit:2017:10.1002/adma.201605598,
author = {Amit, I and Octon, TJ and Townsend, NJ and Reale, F and Wright, CD and Mattevi, C and Craciun, MF and Russo, S},
doi = {10.1002/adma.201605598},
journal = {Advanced Materials},
title = {Role of charge traps in the performance of atomically-thin transistors},
url = {http://dx.doi.org/10.1002/adma.201605598},
volume = {29},
year = {2017}
}

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TY  - JOUR
AB  - Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge-trapping dynamics that renders a time-dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient optoelectronic devices.
AU  - Amit,I
AU  - Octon,TJ
AU  - Townsend,NJ
AU  - Reale,F
AU  - Wright,CD
AU  - Mattevi,C
AU  - Craciun,MF
AU  - Russo,S
DO  - 10.1002/adma.201605598
PY  - 2017///
SN  - 1521-4095
TI  - Role of charge traps in the performance of atomically-thin transistors
T2  - Advanced Materials
UR  - http://dx.doi.org/10.1002/adma.201605598
UR  - http://hdl.handle.net/10044/1/44356
VL  - 29
ER  - 

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