Publications
150 results found
Haigh D, Tan FQ, Papavassiliou C, 2004, Systematic synthesis method for analogue circuits - part III. all- transistor circuit synthesis, New York, IEEE international symposium on circuits and systems, Vancouver, Canada, 23 - 26 May 2004, Publisher: IEEE, Pages: 709-712
Vilches A, Fobelets K, Michelakis K, et al., 2003, Monolithic micropower amplifier using SiGe <i>n</i>-MODFET device, ELECTRONICS LETTERS, Vol: 39, Pages: 884-886, ISSN: 0013-5194
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- Citations: 11
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2003, Effect of temperature on the transfer characteristic of a 0.5m-gate Si:SiGe depletion-mode n-MODFET, ISTDM 2003, Japan, 15 - 17 January 2003
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2003, Effect of temperature on the transfer characteristic of a 0.5m-gate Si:SiGe depletion-mode n-MODFET, ISTDM 2003, Japan, 15 - 17 January 2003
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2003, Thermal study of 0.5um-gate Si/SIGe depletion-mode n-MOSFETs, CDE-2003, Calella (Barcelona), Spain
Li SM, Fobelets K, Velazquez-Perez JE, et al., 2003, Influence of substrate thinning on the threshold voltage of Si:SiGe Heterojunction MOSFETs, International SiGe technology and device meeting (ISTDM2003), Nagoya, Japan, 15 - 17 January 2003, Pages: 91-93
Fobelets K, Ferguson RS, Gaspari V, et al., 2002, Experimental study of depletion mode SiGe MOSFETs for low temperature operation, Firenze, Italy, IEEE European solid-state device research conference 2002, Italy, Publisher: IEEE, Pages: 555-558
McCarthy A, Suyal H, Casswell JJ, et al., 2002, An optoelectronic crosspoint switch: the devices and a polymer-based integration platform, New York, 15th annual meeting of the IEEE Lasers and Electro Optics Society, Glasgow, Scotland, 10 - 14 November 2002, Publisher: IEEE, Pages: 55-56
Semati M, Arora R, Papavasiliou C, 2002, A monolithic 4x4 TIA, crosspoint switch and laser driver IC with very high programming speed, IEEE European solid state circuits conference, Pages: 499-502
Papavassiliou C, Fobelets K, Toumazou C, 2001, SiGe hetero-FETs potential for micropower applications, IEICE TRANSACTIONS ON ELECTRONICS, Vol: E84C, Pages: 1414-1422, ISSN: 0916-8524
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- Citations: 4
Papavassiliou C, Fobelets K, Toumazou C, 2001, SiGe hetero-FETs potential for micropower applications, IEICE Transactions on Electronics, Vol: E84-C, Pages: 1414-1422, ISSN: 0916-8524
Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostructure FET at the law power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
Michelakis K, Despotopoulos S, Badcock SG, et al., 2001, SiGe HMOSFET Differential Pair, International symposium on circuits and systems, Sydney, Australia, May 2001, Publisher: IEEE, Pages: 679-682
Papavassiliou C, Fobelets K, Jeamsaksiri W, et al., 2000, Potential of SiGe Heterostructure FETs for Micropower Applications, TWHM'00 Japan
Park SM, Toumazou C, Papavassiliou C, 2000, A high-speed four-channel integrated optical receiver array using SiGe HBT technology, IEEE Proc.International Symposium on Circuits and Systems, Vol: 5, Pages: 433-436
Park SM, Toumazou C, Papavassiliou C, 2000, A high-speed four-channel integrated optical receiver array using SiGe HBT technology, IEEE Proc.International Symposium on Circuits and Systems, Vol: 5, Pages: 433-436
Park SM, Papavassiliou C, 1999, On the Design of Low-Noise, Giga-hertz Bandwidth Preamplifiers for Optical Receiver Applications, IEEE International Conference on Electronics, Circuits and Systems, 99
Manetakis K, Toumazou C, Papavassiliou C, 1999, SC Quadrature Mixer for IF Bandpass Sampling, IEEE International Conference on Electronics, Circuits and Systems (ICECS '99), Cyprus, Sept. 1999, Pages: 9-12
Papavassiliou C, Toumazou C, Tu S, et al., 1999, A Report on SiGe FET Circuit Design, DERA
Manetakis K, Toumazou C, Papavassiliou C, 1998, A 120MHz, 12mW CMOS current feedback opamp, IEEE Custom Integrated Circuits Conference, Publisher: IEEE, Pages: 365-368
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- Citations: 5
Payne A, Thanachayanont A, Papavassiliou C, 1998, A 150MHz Translinear Phase-Locked Loop, IEEE Trans.Circuits & Systems - Part II, Vol: 45, Pages: 1220-1231
Manetakis K, Toumazou C, Papavassiliou C, 1998, A High Frequency CMOS Current Feedback Opamp, IEEE ISCAS 1998
Papavassiliou C, Georgakilas C, Aperathitis A, et al., 1997, Silicon Substrate Optimization for Microwave Application of GaAs/SI Mesfets, Materials Science and Engineering B, Vol: 44, Pages: 351-354
Manetakis K, Toumazou C, Papavassiliou C, 1997, High-frequency CMOS current feedback opamp, IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Proceedings, Pages: 79-82
Georgakilas A, Papavassiliou C, Constantinides GA, et al., 1996, Effects of Si(100) tilting angle and prelayer conditions on GaAs/Si heterostructures, Applied Surface Science, Vol: 102, Pages: 67-72
Kayambaki M, Callec R, Constantinidis G, et al., 1995, Investigation of Si-substrate preparation for GaAs-on-Si MBE growth, 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference, Publisher: ELSEVIER SCIENCE BV, Pages: 300-303, ISSN: 0022-0248
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- Citations: 15
Papavassiliou C, Constantinidis G, Kornilios N, et al., 1995, Effects of silicon misorientation angle on the RF and DC characteristics of GaAs-on-Si MESFETs, Symposium on Strained Layer Epitaxy-Materials, Processing, and Device Applications, Publisher: MATERIALS RESEARCH SOC, Pages: 345-350, ISSN: 0272-9172
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- Citations: 1
GEORGAKILAS A, HALKIAS G, CHRISTOU A, et al., 1993, A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS/INAIAS HEMT TECHNOLOGY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 140, Pages: 1503-1509, ISSN: 0013-4651
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- Citations: 19
GEORGAKILAS A, HALKIAS G, CHRISTOU A, et al., 1993, MICROWAVE PERFORMANCE OF GAAS-ON-SI MESFETS WITH SI BUFFER LAYERS, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 40, Pages: 507-512, ISSN: 0018-9383
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- Citations: 11
DRESSELHAUS PD, PAPAVASSILIOU CMA, WHEELER RG, et al., 1992, OBSERVATION OF SPIN PRECESSION IN GAAS INVERSION-LAYERS USING ANTILOCALIZATION, PHYSICAL REVIEW LETTERS, Vol: 68, Pages: 106-109, ISSN: 0031-9007
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- Citations: 227
Halkias G, Papavassiliou C, Perantinos G, et al., 1992, Transimpedance amplifier design and performance for high BIT rate optical fiber local loop networks, Pages: 41-44
A Transimpedance Amplifier has been designed and fabricated using an established GaAs MMIC technology based on ion implanted GaAs MESFETs with 0.5 μm gate length, interdigital and overlay SiN capacitors, via holes and MESA resistors. The amplifier exhibits a transimpedance gain of 71 dBn over the-3 dB bandwidth of DC-2 GHz, a very low equivalent input noise current density of less than 2pA/√Hz and a DC power consumption of 0.62 W. After a series of design iterations, the state of the art amplifier was uniquely unconditionally stable with a large tolerance to external bias conditions.
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