Imperial College London
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Professor Tom Pike

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor of Microengineering
 
 
 
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Contact

 

+44 (0)20 7594 6207w.t.pike

 
 
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Location

 

604Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Asif:1993:10.1063/1.110123,
author = {Asif, Khan M and Kuznia, JN and Olson, DT and George, T and Pike, WT},
doi = {10.1063/1.110123},
journal = {Applied Physics Letters},
pages = {3470--3472},
title = {GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition},
url = {http://dx.doi.org/10.1063/1.110123},
volume = {63},
year = {1993}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - In this letter we report the fabrication of GaN/AlN short-period superlattices using switched atomic layer epitaxy. Superlattice structures with GaN well thicknesses ranging from 2.6 to 20.8 Å (with AlN barrier thicknesses of 2.5, 7.5, and 15 Å) were deposited over basal plane sapphire and characterized for their structure, crystallinity, and optical properties. Cross-sectional transmission electron micrographs indicate GaN/AlN interfaces and the superlattice surfaces are atomically smooth. The structures exhibit strong room temperature photoluminescence and a sharp absorption edge indicating a high optical quality.
AU  - Asif,Khan M
AU  - Kuznia,JN
AU  - Olson,DT
AU  - George,T
AU  - Pike,WT
DO  - 10.1063/1.110123
EP  - 3472
PY  - 1993///
SN  - 0003-6951
SP  - 3470
TI  - GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition
T2  - Applied Physics Letters
UR  - http://dx.doi.org/10.1063/1.110123
VL  - 63
ER  -
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