Publications
440 results found
Zheng RK, Moody MP, Gault B, et al., 2009, On the understanding of the microscopic origin of the properties of diluted magnetic semiconductors by atom probe tomography, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, Vol: 321, Pages: 935-943, ISSN: 0304-8853
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- Citations: 12
Gault B, Moody MP, de Geuser F, et al., 2009, Advances in the calibration of atom probe tomographic reconstruction, JOURNAL OF APPLIED PHYSICS, Vol: 105, ISSN: 0021-8979
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- Citations: 194
Marquis EA, Gault B, 2008, Determination of the tip temperature in laser assisted atom-probe tomography using charge state distributions, JOURNAL OF APPLIED PHYSICS, Vol: 104, ISSN: 0021-8979
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- Citations: 47
Gault B, de Geuser F, Stephenson LT, et al., 2008, Estimation of the reconstruction parameters for atom probe tomography, Microscopy and Microanalysis, Vol: 14, Pages: 296-305, ISSN: 1431-9276
The application of wide field-of-view detection systems to atom probe experiments emphasizes the importance of careful parameter selection in the tomographic reconstruction of the analyzed volume, as the sensitivity to errors rises steeply with increases in analysis dimensions. In this article, a self-consistent method is presented for the systematic determination of the main reconstruction parameters. In the proposed approach, the compression factor and the field factor are determined using geometrical projections from the desorption images. A three-dimensional Fourier transform is then applied to a series of reconstructions, and after comparing to the known material crystallography, the efficiency of the detector is estimated. The final results demonstrate a significant improvement in the accuracy of the reconstructed volumes.
Gault B, Moody MP, Saxey DW, et al., 2008, Atom Probe Tomography at The University of Sydney, International Workshop on Advanced Materials, Publisher: SPRINGER-VERLAG BERLIN, Pages: 187-216, ISSN: 1435-1889
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- Citations: 3
Hsueh TH, Lai WC, Yeh CY, et al., 2008, Alternating Current Bias-assisted Photoenhanced Oxidation of n-GaN in Dionized Water, Conference on Optoelectronic and Microelectronic Materials and Devices, Publisher: IEEE, Pages: 1-+
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- Citations: 4
Gault B, Vella A, Vurpillot F, et al., 2007, Optical and thermal processes involved in ultrafast laser pulse interaction with a field emitter, ULTRAMICROSCOPY, Vol: 107, Pages: 713-719, ISSN: 0304-3991
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- Citations: 18
Deconihout B, Vurpillot F, Gault B, et al., 2007, Toward a laser assisted wide-angle tomographic atom-probe, 49th International Field Emission Symposium, Publisher: WILEY, Pages: 278-282, ISSN: 0142-2421
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- Citations: 63
De Geuser F, Gault B, Bostel A, et al., 2007, Correlated field evaporation as seen by atom probe tomography, SURFACE SCIENCE, Vol: 601, Pages: 536-543, ISSN: 0039-6028
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- Citations: 99
Gault B, Mottay E, Courjaud A, et al., 2007, Ultrafast laser assisted field evaporation and atom probe tomography applications, COLA'05: 8TH INTERNATIONAL CONFERENCE ON LASER ABLATION, Vol: 59, Pages: 132-+, ISSN: 1742-6588
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- Citations: 6
Gault B, Vurpillot F, Vella A, et al., 2006, First steps in ultrafast laser assisted atom probe tomography
Blavette D, Cadel E, Mangelinck D, et al., 2006, Laser atom probe tomography: Some applications, Pages: 61-62
Vella A, Vurpillot F, Gault B, et al., 2006, Evidence of field evaporation assisted by nonlinear optical rectification induced by ultrafast laser, PHYSICAL REVIEW B, Vol: 73, ISSN: 2469-9950
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- Citations: 47
Gault B, Vurpillot F, Vella A, et al., 2006, Design of a femtosecond laser assisted tomographic atom probe, REVIEW OF SCIENTIFIC INSTRUMENTS, Vol: 77, ISSN: 0034-6748
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- Citations: 265
Gault B, Menand A, de Geuser F, et al., 2006, Investigation of an oxide layer by femtosecond-laser-assisted atom probe tomography, APPLIED PHYSICS LETTERS, Vol: 88, ISSN: 0003-6951
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- Citations: 38
Vurpillot F, Gault B, Vella A, et al., 2006, Estimation of the cooling times for a metallic tip under laser illumination, APPLIED PHYSICS LETTERS, Vol: 88, ISSN: 0003-6951
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- Citations: 59
Vella A, Vurpillot F, Gault B, et al., 2006, Evidence of field evaporation assisted by nonlinear optical rectification induced by ultra fast laser, Pages: 83-84
Gault B, Vurpillot F, Bostel A, et al., 2005, Tip-field-enhancement characterisation by Field Ion Microscopy
The interactions between a very fast and intense laser pulse and an object with sub-wavelength dimensions are still now well characterised. The tip field enhancement phenomenon is applied, for example, in the near-field microscopies or in nano-manipulation. But no model has enabled good prediction of the values of the enhanced field. We proposed a new method to measure the enhanced electric field, called effective electric field, at the apex of a tip using a Field Ion Microscope. In Field Ion Microscopy a tip-shape sample with a radius of curvature of a few tens of nanometers is submitted to a high voltage to generate at the apex a very intense electric field. This electric field is used to ionise rare gas atoms to give a magnified image of the surface geometry with up to an atomic resolution. Increasing the voltage can generate the ionisation of the atoms of the tip itself in a process called field evaporation. This physical phenomenon is very sensitive to the magnitude of the electric field, and the variations of a few percents of the field can generate huge variations of the evaporation rate. At a fixed evaporation rate the electric field can thus be well determined. This capability to measure directly the electric field has been used to make experiments [2] at constant evaporation rate to measure the effective electric field at the apex of a tungsten tip illuminated by femtosecond laser pulsed. The polarisation of the laser has been changed to check its influence on the effective field. The dependance of the shape, of the electric properties of the material, of the wavelength of the laser will be studied very soon. This experiments proved that the field evaporation was provoked by the effect of the applied electric field and not due to thermal effects. This very important point opened the opportunity to use a femtosecond laser to create a new generation of 3D Atom Probe. The 3D Atom Probe is the only material analysis technique able to give a 3D virtual image of
Gault B, Vurpillot F, Bostel A, et al., 2005, Estimation of the tip field enhancement on a field emitter under laser illumination, APPLIED PHYSICS LETTERS, Vol: 86, ISSN: 0003-6951
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- Citations: 76
MacGregor G, Sever P, 2001, Introduction, JOURNAL OF THE RENIN-ANGIOTENSIN-ALDOSTERONE SYSTEM, Vol: 2, Pages: 3-3, ISSN: 1470-3203
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