Professor David W. McComb

Faculty of Engineering, Department of Materials

Adjunct Professor

Contact

+44 (0)20 7594 6750d.mccomb Website

Location

Royal School of MinesSouth Kensington Campus

Summary

Publications

Citation

BibTex format

@inproceedings{Deitz:2014:10.1017/S1431927614004486,
author = {Deitz, J and Carnevale, S and De, Graef M and Picard, YN and Ringel, SA and Grassman, T and McComb, DW},
doi = {10.1017/S1431927614004486},
pages = {552--553},
title = {Using electron channeling contrast imaging for misfit dislocation characterization in heteroepitaxial III-V/Si thin films},
url = {http://dx.doi.org/10.1017/S1431927614004486},
year = {2014}
}

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RIS format (EndNote, RefMan)

TY  - CPAPER
AU  - Deitz,J
AU  - Carnevale,S
AU  - De,Graef M
AU  - Picard,YN
AU  - Ringel,SA
AU  - Grassman,T
AU  - McComb,DW
DO  - 10.1017/S1431927614004486
EP  - 553
PY  - 2014///
SN  - 1431-9276
SP  - 552
TI  - Using electron channeling contrast imaging for misfit dislocation characterization in heteroepitaxial III-V/Si thin films
UR  - http://dx.doi.org/10.1017/S1431927614004486
ER  -

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