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@inproceedings{Hemment:1983,
author = {Hemment, PLF and Maydell-Ondrusz, E and Stephens, KG and Arrowsmith, RP and Glaccum, AE and Kilner, JA and Wilson, MC and Booker, GR},
pages = {1855--1860},
title = {OXYGEN AND DEFECT DISTRIBUTIONS IN SILICON ON INSULATOR STRUCTURES FORMED BY HIGH DOSE O** plus IMPLANTATION INTO SILICON.},
year = {1983}
}

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TY  - CPAPER
AB  - Synthesis of SiO//2 by ion implantation may become an important technology for the production of silicon on insulator (SOI) substrates which are suitable for VLSI circuit applications. Such structures may be fabricated by implantation of high doses ( greater than 1018 0 cm minus 2) of high energy ( greater than 100 keV) oxygen ions into heated single crystal silicon wafers. In this paper authors report new results from experiments carried out as part of an 'on-going' collaborative project to characterise the implanted structures.
AU  - Hemment,PLF
AU  - Maydell-Ondrusz,E
AU  - Stephens,KG
AU  - Arrowsmith,RP
AU  - Glaccum,AE
AU  - Kilner,JA
AU  - Wilson,MC
AU  - Booker,GR
EP  - 1860
PY  - 1983///
SP  - 1855
TI  - OXYGEN AND DEFECT DISTRIBUTIONS IN SILICON ON INSULATOR STRUCTURES FORMED BY HIGH DOSE O plus IMPLANTATION INTO SILICON.
ER  -

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