Imperial College London

DrRichardChater

Faculty of EngineeringDepartment of Materials

Instrumentation Research Fellow, Surface Analysis
 
 
 
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Contact

 

+44 (0)20 7594 6740r.chater

 
 
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Location

 

LG62ARoyal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{HEMMENT:1985:10.1016/0168-583X(85)90648-2,
author = {HEMMENT, PLF and PEART, RF and YAO, MF and STEPHENS, KG and ARROWSMITH, RP and CHATER, RJ and KILNER, JA},
doi = {10.1016/0168-583X(85)90648-2},
journal = {NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
pages = {292--297},
title = {SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS},
url = {http://dx.doi.org/10.1016/0168-583X(85)90648-2},
volume = {6},
year = {1985}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AU - HEMMENT,PLF
AU - PEART,RF
AU - YAO,MF
AU - STEPHENS,KG
AU - ARROWSMITH,RP
AU - CHATER,RJ
AU - KILNER,JA
DO - 10.1016/0168-583X(85)90648-2
EP - 297
PY - 1985///
SN - 0168-583X
SP - 292
TI - SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS
T2 - NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
UR - http://dx.doi.org/10.1016/0168-583X(85)90648-2
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1985ADF3300048&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL - 6
ER -