Imperial College London

DrRichardChater

Faculty of EngineeringDepartment of Materials

Instrumentation Research Fellow, Surface Analysis
 
 
 
//

Contact

 

+44 (0)20 7594 6740r.chater

 
 
//

Location

 

LG62ARoyal School of MinesSouth Kensington Campus

//

Summary

 

Publications

Citation

BibTex format

@article{HEMMENT:1985:10.1063/1.95778,
author = {HEMMENT, PLF and PEART, RF and YAO, MF and STEPHENS, KG and CHATER, RJ and KILNER, JA and MEEKISON, D and BOOKER, GR and ARROWSMITH, RP},
doi = {10.1063/1.95778},
journal = {APPLIED PHYSICS LETTERS},
pages = {952--954},
title = {HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN},
url = {http://dx.doi.org/10.1063/1.95778},
volume = {46},
year = {1985}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AU - HEMMENT,PLF
AU - PEART,RF
AU - YAO,MF
AU - STEPHENS,KG
AU - CHATER,RJ
AU - KILNER,JA
AU - MEEKISON,D
AU - BOOKER,GR
AU - ARROWSMITH,RP
DO - 10.1063/1.95778
EP - 954
PY - 1985///
SN - 0003-6951
SP - 952
TI - HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN
T2 - APPLIED PHYSICS LETTERS
UR - http://dx.doi.org/10.1063/1.95778
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1985AHN1600018&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL - 46
ER -