Imperial College London
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Dr Robert Hoye, FIMMM CEng CSci

Faculty of Engineering, Department of Materials

Honorary Senior Lecturer
 
 
 
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Contact

 

+44 (0)20 7594 6048r.hoye Website

 
 
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Location

 

2.27Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Bai:2017:10.1063/1.4990456,
author = {Bai, F and Zhang, Y and Duan, Z and Hoye, R and Trevor, M and Li, Y and Li, M},
doi = {10.1063/1.4990456},
journal = {AIP Advances},
title = {Broadband antireflection property of silicon nanocone arrays with porous sidewalls fabricated by Ag-catalyzed etching},
url = {http://dx.doi.org/10.1063/1.4990456},
volume = {7},
year = {2017}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Siliconnanocone (SiNC) arrays with porous sidewallswere successfully fabricated through a simple, low-cost Ag-catalyzed etching method. By electron spin resonance technique and TEM analysis, it has been verified that the formation of porous SiNC arrays is due to the gradual dissolution of the pristine Ag nanoislands as they sank into the Si and the lateral etching of the regenerated Ag nanoparticles to the SiNC sidewalls. Theoretical calculation results suggest that the reflectance of the porous SiNC arrays is much lower than that of the smooth SiNC arrays over wide wavelengths ranging from 300nm to 1700nm. The long-wavelength reflectance can be further suppressed by increasing surface porosity of the SiNCs and their length. Experimental test results show the lowest average reflectance of 1.7% in the wavelength range of 300-1000nm while approximately 30% in the wavelength ranges of 1200-1700nm, which is generally consistent with the theoretical results. This shows that the porous SiNC arrays had excellent broadband antireflection properties, making them attractive for a wide range of potential applications in Si-based optoelectronic devices.
AU  - Bai,F
AU  - Zhang,Y
AU  - Duan,Z
AU  - Hoye,R
AU  - Trevor,M
AU  - Li,Y
AU  - Li,M
DO  - 10.1063/1.4990456
PY  - 2017///
SN  - 2158-3226
TI  - Broadband antireflection property of silicon nanocone arrays with porous sidewalls fabricated by Ag-catalyzed etching
T2  - AIP Advances
UR  - http://dx.doi.org/10.1063/1.4990456
UR  - http://hdl.handle.net/10044/1/75992
VL  - 7
ER  -
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