Imperial College London
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Professor Tom Pike

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor of Microengineering
 
 
 
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Contact

 

+44 (0)20 7594 6207w.t.pike

 
 
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Location

 

604Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@inproceedings{Budraa:1999:10.1109/memsys.1999.746877,
author = {Budraa, NK and Jackson, HW and Barmatz, M and Pike, WT and Mai, JD},
doi = {10.1109/memsys.1999.746877},
pages = {490--492},
title = {Low pressure and low temperature hermetic wafer bonding using microwave heating},
url = {http://dx.doi.org/10.1109/memsys.1999.746877},
year = {1999}
}
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RIS format (EndNote, RefMan)

TY  - CPAPER
AB  - We bonded gold on silicon substrates (Au/Si) for a MEMS application by using microwave radiation in a single-mode cavity. Microwave radiation selectively heats materials; the energy is deposited in the metallic portion of the substrates in this application. This concentration of the energy forms the bonding rather quickly and with minimal heating of the substrate. The short bonding process- time allows for minimal diffusion of the Si into the metallization. Since no pressure is applied to form the bonding, mechanical stresses are minimized. The substrates bonded by our technique formed a hermetically sealed micro-cavity. Preliminary He leak-tests from these bonded samples show leak-rates on the order of 3×109 atom cc/s.
AU  - Budraa,NK
AU  - Jackson,HW
AU  - Barmatz,M
AU  - Pike,WT
AU  - Mai,JD
DO  - 10.1109/memsys.1999.746877
EP  - 492
PY  - 1999///
SP  - 490
TI  - Low pressure and low temperature hermetic wafer bonding using microwave heating
UR  - http://dx.doi.org/10.1109/memsys.1999.746877
ER  -
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