Imperial College London
Portrait Picture

Professor Tom Pike

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor of Microengineering
 
 
 
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Contact

 

+44 (0)20 7594 6207w.t.pike

 
 
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Location

 

604Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Rich:1992:10.1063/1.351939,
author = {Rich, DH and George, T and Pike, WT and Maserjian, J and Grunthaner, FJ and Larsson, A},
doi = {10.1063/1.351939},
journal = {Journal of Applied Physics},
pages = {5834--5839},
title = {Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs multiple quantum wells},
url = {http://dx.doi.org/10.1063/1.351939},
volume = {72},
year = {1992}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - The spatial distribution of the long-wavelength luminescence in thick In0.2Ga0.8As/GaAs multiple quantum wells (MQWs) has been investigated using cathodoluminescence (CL) imaging and spectroscopy. The CL spectra show defect-induced broad bands between 1000λ1600 nm. These bands exhibit spatial variations which correlate with the dark line defects (DLDs) observed in the λ=950 nm exciton luminescence imaging. Transmission electron microscopy showed that [110]-oriented misfit dislocations occur primarily at the substrate-to-MQW and GaAs capping layer-to-MQW interfaces. The large spatial variation of the luminescence intensities indicates that the DLDs observed in CL images are caused by the presence of nonradiative recombination centers occurring in the MQW region located between the interface misfit dislocations. This study provides new information describing the origin and nature of DLDs and differs from previous models which have regarded the electronic nature of dislocation cores as the primary mechanism for inducing DLD radiative contrast in luminescence imaging of strained InGaAs/GaAs.
AU  - Rich,DH
AU  - George,T
AU  - Pike,WT
AU  - Maserjian,J
AU  - Grunthaner,FJ
AU  - Larsson,A
DO  - 10.1063/1.351939
EP  - 5839
PY  - 1992///
SN  - 0021-8979
SP  - 5834
TI  - Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs multiple quantum wells
T2  - Journal of Applied Physics
UR  - http://dx.doi.org/10.1063/1.351939
VL  - 72
ER  -
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