Publications
114 results found
Wilhelmsson O, Eklund P, Giuliani F, et al., 2007, Intrusion-type deformation in epitaxial Ti<sub>3</sub>SiC<sub>2</sub>/TiC<sub>0.67</sub> nanolaminates, APPLIED PHYSICS LETTERS, Vol: 91, ISSN: 0003-6951
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- Citations: 13
Scholz T, McLaughlin KK, Giuliani F, et al., 2007, Nanoindentation initiated dislocations in barium titanate (BaTiO<sub>3</sub>), APPLIED PHYSICS LETTERS, Vol: 91, ISSN: 0003-6951
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- Citations: 32
Clegg WJ, Giuliani F, Long Y, et al., 2006, Hardness of multilayered ceramics, Ceramic-Matrix Composites: Microstructure, Properties and Applications, Pages: 216-240, ISBN: 9781855739420
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- Citations: 6
Clegg WJ, Giuliani F, Long Y, et al., 2006, Hardness of multilayered ceramics, Ceramic-Matrix Composites: Microstructure, Properties and Applications, Pages: 216-240, ISBN: 9781855739420
Long Y, Giuliani F, Lloyd SJ, et al., 2006, Deformation processes and the effects of microstructure in multilayered ceramics, COMPOSITES PART B-ENGINEERING, Vol: 37, Pages: 542-549, ISSN: 1359-8368
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- Citations: 23
Clegg WJ, Giuliani F, Long Y, et al., 2006, Ceramic matrix composites, Ceramic matrix composites, Editors: Low, ISBN: 9781855739420
The aim of this comprehensive new book is to evaluate the microstructure-propertyrelationships of various ceramic-matrix composites.
Lloyd SJ, Castellero A, Giuliani F, et al., 2005, Observations of nanoindents via cross-sectional transmission electron microscopy: a survey of deformation mechanisms, PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, Vol: 461, Pages: 2521-2543, ISSN: 1364-5021
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- Citations: 73
Giuliani F, Goruppa A, Lloyd SJ, et al., 2005, High temperature deformation of AIN/CrN multilayers using nanoindentation, Symposium on Fundamentals of Nanoindentation and Nanotribology III held at the 2004 MRS Fall Meeting, Publisher: MATERIALS RESEARCH SOC, Pages: 159-164, ISSN: 0272-9172
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- Citations: 1
Vandeperre LJ, Giuliani F, Clegg WJ, 2005, An analytical approach for relating hardness and yield strength for materials with high ratio of yield strength to Young modulus, Symposium on Fundamentals of Nanoindentation and Nanotribology III held at the 2004 MRS Fall Meeting, Publisher: MATERIALS RESEARCH SOCIETY, Pages: 323-328, ISSN: 0272-9172
Giuliani F, Goruppa A, Lloyd SJ, et al., 2005, Indentation of AIN/CrN multillayers from room temperature to 400°C, 8th International Symposium on Multifunctional and Functionally Graded Materials (FMG2004), Publisher: TRANS TECH PUBLICATIONS LTD, Pages: 335-340, ISSN: 0255-5476
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- Citations: 4
Vandeperre LJ, Giuliani F, Clegg WJ, 2004, Effect of elastic surface deformation on the relation between hardness and yield strength, JOURNAL OF MATERIALS RESEARCH, Vol: 19, Pages: 3704-3714, ISSN: 0884-2914
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- Citations: 31
Giuliani F, Lloyd SJ, Vandeperre LJ, et al., 2004, Deformation in GaAs under nanoindentation, Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003), Publisher: IOP PUBLISHING LTD, Pages: 123-126, ISSN: 0951-3248
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- Citations: 1
Vandeperre LJ, Giuliani F, Lloyd SJ, et al., 2004, Mechanisms controlling the hardness of Si and Ge, Symposium on Thin Films - Stresses and Mechanical Properties X held at the 2003 MRS Fall Meeting, Publisher: MATERIALS RESEARCH SOCIETY, Pages: 319-324, ISSN: 0272-9172
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- Citations: 2
Kao HK, Cargill GS, Giuliani F, et al., 2003, Relationship between copper concentration and stress during electromigration in an Al(0.25 at.% Cu) conductor line, JOURNAL OF APPLIED PHYSICS, Vol: 93, Pages: 2516-2527, ISSN: 0021-8979
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- Citations: 6
Mandracci P, Rastello ML, Rava P, et al., 1999, Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector, Thin Solid Films, Vol: 337, Pages: 232-234, ISSN: 0040-6090
UV detectors based on a-Si:H/a-SiC:H were deposited by plasma enhanced chemical vapor deposition and characterized in terms of their photoelectrical properties. A quantum efficiency of 90%, corresponding to 0.28 A/W, at 365 nm was measured for devices having p-layer and i-layer thickness less than 10 nm. A good uniformity (15%) was achieved on area of 5 × 5 cm. A linear dependence of the photocurrent as a function of impinging photon flux, corresponding to a constant responsivity, was found. Aging experiments were performed by UV irradiation both on devices and on thin films inserted in the detectors with the aim of investigating the possible correlations. © 1999 Elsevier Science S.A. All rights reserved.
Giorgis F, Giuliani F, Pirri CF, et al., 1999, Carbon rich a-Si<inf>1-x</inf>C<inf>x</inf>:H films: An investigation on radiative recombination properties, Pages: 261-266, ISSN: 0272-9172
Amorphous silicon-carbon a-Si1-xCx:H films with x in the range 0.3-1 have been deposited by PECVD of SiH4+CH4 and SiH4+C2H2 gas mixtures. Photoluminescence characterizations have been performed, together with optical measurements. The dependence of radiative recombination properties as a function of x and as a function of damage introduced by H+-ion irradiation has been presented and correlated with the changes in the absorption spectra.
Rava P, Giuliani F, Giorgis F, et al., 1998, Amorphous silicon nitrogen alloys deposited by PECVD under hydrogen dilution conditions, Pages: 580-583, ISSN: 0277-786X
Amorphous silicon-nitrogen (a-Si1-xNx:H) alloys with x in the range 0.01-0.57 have been deposited in a dedicated chamber by ultra high vacuum PECVD in SiH4+NH3 and SiH4+NH3+H2 gas mixtures. A picture of optical, compositional and structural properties was deduced for the entire compositional range by optical spectroscopy, Rutherford Backscattering Spectrometry, elastic recoil detection analysis and infrared spectroscopy. Defect and photoelectrical properties have been investigated for the films having optical gap in the range 1.9-2.7 eV.
Giorgis F, Giuliani F, Pirri CF, et al., 1998, Photoluminescence and electronic density of states in a-C:H films, Applied Physics Letters, Vol: 72, Pages: 2520-2522, ISSN: 0003-6951
The density of states in the energy region near Fermi level for hydrogenated amorphous carbon thin films is presented. The different types of states are identified in their origin and the problem of their detection is considered. It is shown that only some of these states are accessible to detection by electron spin resonance. A quantitative correlation between their density and the quantum efficiency of the room temperature photoluminescence process is achieved. Such correlation applies to films having a wide range of physical properties deposited by different techniques. © 1998 American Institute of Physics.
Giorgis F, Giuliani F, Pirri CF, et al., 1998, Radiative recombination processes and defects in a-C:H films deposited by PECVD, Diamond and Related Materials, Vol: 7, Pages: 435-439, ISSN: 0925-9635
The aim of this work is to present a consistent picture of the electronic density of states (DOS) close to the Fermi energy level in a-C:H materials and to clarify its correlation with photoluminescence processes. When the sp2 sites fraction is below a percolation threshold, the DOS bands due to π and π* states, energetically located between the σ and σ* bands, are localized. The one-electron approximation can be used to describe the optical transitions only if such localized nature of the DOS is considered. Four types of electronic states responsible for non-radiative recombinations are assumed to be present in the energy region near Fermi level: states occupied by π paired electrons, π states of sp2 isolated sites, σ dangling bonds and π states due to sp2 odd clusters. In the light of this DOS model, a successful correlation between photoluminescence quantum efficiency and electronic DOS abundance near Fermi level has been reached. © 1998 Elsevier Science S.A.
Giorgis F, Giuliani F, Pirri CF, et al., 1998, Wide band gap a-SiC:H films for optoelectronic applications, Journal of Non-Crystalline Solids, Vol: 227-230, Pages: 465-469, ISSN: 0022-3093
a-SiC:H samples over the entire compositional range have been deposited by using 13.56 MHz radio frequency chemical vapor deposition (RF-CVD) with C2H2 carbon source and electron cyclotron resonance chemical vapor deposition with C2H4 source. Films with the largest deposition rates have been obtained in the C-rich regime with defect density ∼ 1017 cm-3. Compositional, optical, structural and radiative emission properties have been investigated and correlated for specimens obtained from both deposition techniques. © 1998 Elsevier Science B.V. All rights reserved.
Summonte C, Rizzoli R, Galloni R, et al., 1998, Photoluminescence and electroluminescence properties of a-Si<inf>1-x</inf>N<inf>x</inf>:H based superlattice structures, Journal of Non-Crystalline Solids, Vol: 227-230, Pages: 1127-1131, ISSN: 0022-3093
A strong increase in the room temperature photoluminescence efficiency in a-Si1-xNxNA:H multilayer structures with respect to thick single well layers is reported. This result has been correlated to carrier confinement in the well layers. The multilayer structures consist of a periodic sequence of barrier (E04 = 5.0 eV or 4.2 eV) and well layers (E04 = 2.1 to 2.6 eV), deposited by plasma enhanced chemical vapor deposition. Optical properties of these structures show a blue shift of the absorption edge, and evidence that the defect density associated with the internal interfaces is negligible. Electroluminescent devices have been obtained by inserting an a-Si1-xNx:H multilayer in a p-i-n structure. Such devices show a broad electroluminescence peak, in the yellow region of the visible spectrum, at about 2.1 eV. © 1998 Elsevier Science B.V. All rights reserved.
Giorgis F, Giuliani F, Pirri CF, et al., 1998, Correlation between gap density of states and recombination processes in high electronic quality a-C:H, Journal of Non-Crystalline Solids, Vol: 227-230, Pages: 565-569, ISSN: 0022-3093
The investigation on electronic density of states (DOS) and photoluminescence processes in a-C:H films has attracted, in the last years, interest, due to the foreseen technological application of carbon based materials. In this paper we present a new model for electronic DOS of a-C:H having sp2 fraction less than a percolation threshold. This model is able to explain the optical absorption coefficient for photon energies in the range 0.7 to 3.5 eV. Moreover, with this model we correlate, as it happens in a-Si:H, the photoluminescence quantum efficiency and the density of states close to the Fermi energy. Such states, however, can have either diamagnetic or paramagnetic nature so that some of them can be detected by electron spin resonance and others by optical transitions. © 1998 Elsevier Science B.V. All rights reserved.
Giorgis F, Giuliani F, Pirri CF, et al., 1998, Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition, Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Vol: 77, Pages: 925-944, ISSN: 1364-2812
High-electronic quality hydrogenated amorphous silicon-nitrogen (a-Si1-xNx: H) films with an energy gap in the range 1.9-2.7eV have been deposited by plasma-enhanced chemical vapour deposition in silane-ammonia gas mixtures at two different gas residence times and in hydrogen-diluted silane-ammonia gas mixtures. Compositional, structural, electrical and optical properties have been investigated. For the first time the effects of hydrogen dilution of SiH4 + NH3 gas mixtures on the a-Si1-xNx: H network is reported. We have observed that hydrogen dilution decreases hydrogen incorporation and increases nitrogen incorporation, promoting a higher connectivity of the a-Si1-xNx :H network. All films show good electronic properties, comparable with or superior to those of amorphous silicon-carbon films, which are improved in films deposited from hydrogen-diluted gas mixtures. © 1998 Taylor & Francis Group, LLC.
Giorgis F, Giuliani F, Pirri CF, et al., 1997, Photoluminescence and optical characterization of a-Si<inf>x</inf>N<inf>1-x</inf>:H based multilayers grown by PECVD, Pages: 489-494, ISSN: 0272-9172
High room temperature photoluminescence efficiency (PLE) was observed for the first time in a-SixN1-x:H based nanometric multilayers deposited by plasma enhanced chemical vapour deposition (PECVD). The structure consists of alternate stoichiometric a-Si3N4:H barrier layers (E04=5.0 eV) and well layers in which E04 is varied between 2.11 eV and 2.64 eV. The peak of PL spectra and the absorption coefficient edge exhibits a blue shift up to 0.5-0.6 eV by decreasing the well thickness from 30 angstrom down to 5-10 angstrom. A strong increase in the PLE of multilayers, with well thickness around 5-10 angstrom, with respect to the PLE of bulk material was obtained. A p-i-n light emitting device (LED) with a multilayered structure as i-layer, having well layers with E04=2.64 eV and thickness 10 angstrom, is presented. The LED under forward bias shows an emission visible with the naked eye, with limited degradation after 8 hours of continuous operation.
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