Publications
172 results found
Bennett AJ, Murray R, 2002, Nucleation and ripening of seeded InAs/GaAs quantum dots, Journal of Crystal Growth, Vol: 240, Pages: 439-444, ISSN: 0022-0248
Clarke DG, Pidgeon CR, Wells JP, et al., 2002, Double resonance study of hole burning in self-assembled quantum dots, Physica B - Condensed Matter, Vol: 314, Pages: 474-476, ISSN: 0921-4526
Le Ru EC, Bennett AJ, Roberts C, et al., 2002, Strain and electronic interactions in InAs/GaAs quantum dot multilayers for 1300 nm emission, Journal of Applied Physics, Vol: 91, Pages: 1365-1370, ISSN: 0021-8979
Joyce PB, Krzyzewski TJ, Bell GR, et al., 2001, Optimizing the growth of 1.3 μm InAs/GaAs quantum dots -: art. no. 235317, PHYSICAL REVIEW B, Vol: 64, ISSN: 2469-9950
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- Citations: 61
Joyce PB, Krzyzewski TJ, Bell GR, et al., 2001, Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy, 11th International Conference on Molecular Beam Epitaxy (MBE-XI), Publisher: ELSEVIER SCIENCE BV, Pages: 1000-1004, ISSN: 0022-0248
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- Citations: 40
Zhi D, Davock H, Murray R, et al., 2001, Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy, JOURNAL OF APPLIED PHYSICS, Vol: 89, Pages: 2079-2083, ISSN: 0021-8979
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- Citations: 45
Malik S, Le Ru EC, Childs D, et al., 2001, Time-resolved studies of annealed InAs/GaAs self-assembled quantum dots (Article no. 155313), Physical Review B (Condensed Matter and Materials Physics), Vol: 63, ISSN: 0163-1829
Le Ru EC, Siverns PD, Murray R, 2001, Luminescence enhancement by hydrogen passivation in InAs/GaAs self-assembled quantum dots (Article no. J9.4), Warrendale PA, 2nd symposium on semiconductor quantum dots, Boston, MA, 2 November 2000, Publisher: Materials Research Society
Le Ru EC, Malik S, Childs D, et al., 2001, Prediction of the properties of annealed InAs/GaAs quantum dot samples assuming conservation of indium atoms (Article no. J3.27), Warrendale PA, 2nd symposium on semiconductor quantum dots, Boston, MA, November 2000, Publisher: Materials Research Society
Malik S, Le Ru E, Childs D, et al., 2001, Radiative decay and carrier relaxation in annealed InAs/GaAs self-assembled quantum dots (Article no. J5), Warrendale, PA, 2nd symposium on semiconductor quantum dots, Boston, MA, November 2000, Publisher: Materials Research Society
Joyce PB, Krzyzewski TJ, Bell GR, et al., 2001, Effect of growth rate and coverage on the composition and optical properties of InAs/GaAs self-assembled quantum dots, Warrendale, PA, 2nd symposium on semiconductor quantum dots, Boston, MA, November 2000, Publisher: Materials Research Society, Pages: J9-J9
Murray R, 2001, Highly uniform InAs/GaAs quantum dots (Invited talk), Advanced physical fields symposium, Tsukuba, Japan, 2001
Joyce PB, Krzyzewski TJ, Bell GR, et al., 2001, Effect of growth rate and coverage on the composition and optical properties of InAs/GaAs self-assembled quantum dots (Article no. J9.2), Warrendale, PA, 2nd symposium on semiconductor quantum dots, Boston, MA, November 2000, Publisher: Materials Research Society
Le Ru EC, Fack J, Murray R, 2001, Superlinear dependence of the photoluminescence from InAs/GaAs self-assembled quantum dots (Article no. J3.28), Warrendale, PA, 2nd symposium on semiconductor quantum dots, Boston, MA, November 2000, Publisher: Materials Research Society
Childs D, Malik S, Le Ru E, et al., 2001, Tuning InAs/GaAs self-assembled quantum dots to investigate relaxation processes (Article no J3.36), Warrendale, PA, 2nd symposium on semiconductor quantum dots, Boston, MA, November 2000, Publisher: Materials Research Society
Le Ru EC, Siverns PD, Murray R, 2000, Luminescence enhancement from hydrogen-passivated self-assembled quantum dots, APPLIED PHYSICS LETTERS, Vol: 77, Pages: 2446-2448, ISSN: 0003-6951
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- Citations: 48
Joyce PB, Krzyzewski TJ, Bell GR, et al., 2000, Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy, PHYSICAL REVIEW B, Vol: 62, Pages: 10891-10895, ISSN: 2469-9950
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- Citations: 188
Murdin BN, Hollingworth AR, Barker JA, et al., 2000, Double-resonance spectroscopy of InAs/GaAs self-assembled quantum dots, PHYSICAL REVIEW B, Vol: 62, Pages: R7755-R7758, ISSN: 1098-0121
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- Citations: 24
Pidgeon CR, Findlay PC, Wells JPR, et al., 2000, Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots
An inter/intra-band double-resonance technique that allows to make an unequivocal assignment of the resonant bound-bound intersublevel absorption in self-organized InAs/GaAs quantum dots is developed. The method is applied to dots grown at a low growth rate, which show well resolved photoluminescence (PL) lines. The double resonance and its polarization selection rules allows the identification not only the levels involved in the PL transition but the relative importance of the causes of its inhomogeneous broadening.
Murray R, 2000, Luminescence enhancement in (InGa)As/GaAs quantum wells and dots by hydrogen passivation, Applied Physics Letters, Vol: 77
Murray R, Bryan C, Button C, et al., 2000, 1.55 micron emission from InAs/InP self-assembled quantum dots, Symposium on Semiconductor Quantum Dots held at the 1999 MRS Spring Meeting, Publisher: MATERIALS RESEARCH SOCIETY, Pages: 159-164, ISSN: 0272-9172
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- Citations: 1
Murray R, 2000, Effect of the growth rate on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy, Physical Review D, Vol: 62, Pages: 10891-10891
Murray R, 2000, Double resonance spectroscopy of InAs/GaAs self-assembled quantum dots, Physical Review B, Vol: 62
Joyce BA, Murray R, Roberts C, 2000, Scanning transmission electron microscopy (STEM) study of InAs/GaAs quantum dots, Physical Review B, Vol: 58
Joyce PB, Krzyzewski TJ, Bell GR, et al., 2000, Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy, Physical Review B, Vol: 62, Pages: 10891-10895, ISSN: 0163-1829
Malik S, Siverns P, Childs D, et al., 2000, Controlling growth of InAs/GaAs self-assembled quantum dots to give 1.3 mu m room temperature emission, Semiconductor Quantum Dots, Vol: 571, Pages: 273-278, ISSN: 0272-9172
Murdin BN, Hollingworth AR, Barker J, et al., 1999, Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots, 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 11), Publisher: ELSEVIER SCIENCE BV, Pages: 5-7, ISSN: 0921-4526
Riley LS, Hall S, Harris J, et al., 1999, SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation, 11th Biennial Conference on Insulating Films on Semiconductors, Publisher: ELSEVIER SCIENCE BV, Pages: 227-230, ISSN: 0167-9317
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- Citations: 4
Gray JW, Childs D, Malik S, et al., 1999, Quantum dot resonant cavity light emitting diode operating near 1300nm, ELECTRONICS LETTERS, Vol: 35, Pages: 242-243, ISSN: 0013-5194
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- Citations: 26
Childs D, Malik S, Siverns P, et al., 1999, 1.3 μm InAs/GaAs quantum dot led, Materials Research Society Symposium - Proceedings, Vol: 571, Pages: 267-272, ISSN: 0272-9172
We have determined the growth conditions which result in a narrow linewidth and room temperature emission at 1.3μm from InAs/GaAs Quantum dots (QDs). The QDs formed under these conditions are extremely uniform in size and exhibit an emission linewidth of only 25meV. Single QD layers have been incorporated into p-i-n diodes which exhibit strong electroluminescence. We have compared the efficiency of these devices with a nominally identical quantum well device. The QD based device exhibits a higher electroluminescence efficiency, especially at low current densities. At higher current densities there is a loss of efficiency due to recombination from excited states. Operated under reverse bias, the diodes act as photo-detectors and the measured photocurrent spectrum exhibits peaks due to absorption in the ground and excited states of the QDs as well as the 2D confining layer. © 2000 Materials Research Society.
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