Imperial College London
Alternate

ProfessorStefanMaier

Faculty of Natural Sciences, Department of Physics

Lee-Lucas Chair in Experimental Physics
 
 
 
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Contact

 

+44 (0)20 7594 6063s.maier Website CV

 
 
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Location

 

Huxley 903Huxley BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@unpublished{Sortino:2020,
author = {Sortino, L and Brooks, M and Zotev, PG and Genco, A and Cambiasso, J and Mignuzzi, S and Maier, SA and Burkard, G and Sapienza, R and Tartakovskii, AI},
publisher = {arXiv},
title = {Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors},
url = {http://arxiv.org/abs/2002.04278v1},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - UNPB
AB  - Atomically thin two-dimensional semiconducting transition metaldichalcogenides (TMDs) can withstand large levels of strain before theirirreversible damage occurs. This unique property offers a promising route forcontrol of the optical and electronic properties of TMDs, for instance bydepositing them on nano-structured surfaces, where position-dependent straincan be produced on the nano-scale. Here, we demonstrate strain-inducedmodifications of the optical properties of mono- and bilayer TMD WSe$_2 $placed on photonic nano-antennas made from gallium phosphide (GaP).Photoluminescence (PL) from the strained areas of the TMD layer is enhancedowing to the efficient coupling with the confined optical mode of thenano-antenna. Thus, by following the shift of the PL peak, we deduce thechanges in the strain in WSe$_2$ deposited on the nano-antennas of differentradii. In agreement with the presented theory, strain up to $\approx 1.4 \%$ isobserved for WSe$_2$ monolayers. We also estimate that $>3\%$ strain isachieved in bilayers, accompanied with the emergence of a direct bandgap inthis normally indirect-bandgap semiconductor. At cryogenic temperatures, wefind evidence of the exciton confinement in the most strained nano-scale partsof the WSe$_2$ layers, as also predicted by our theoretical model. Our results,of direct relevance for both dielectric and plasmonic nano-antennas, show thatstrain in atomically thin semiconductors can be used as an additional parameterfor engineering light-matter interaction in nano-photonic devices.
AU  - Sortino,L
AU  - Brooks,M
AU  - Zotev,PG
AU  - Genco,A
AU  - Cambiasso,J
AU  - Mignuzzi,S
AU  - Maier,SA
AU  - Burkard,G
AU  - Sapienza,R
AU  - Tartakovskii,AI
PB  - arXiv
PY  - 2020///
TI  - Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors
UR  - http://arxiv.org/abs/2002.04278v1
UR  - http://hdl.handle.net/10044/1/76855
ER  -
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