Imperial College London
Alternate

ProfessorThomasAnthopoulos

Faculty of Natural Sciences, Department of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Mottram:2016:10.1021/acsami.5b11210,
author = {Mottram, AD and Lin, YH and Pattanasattayavong, P and Zhao, K and Amassian, A and Anthopoulos, TD},
doi = {10.1021/acsami.5b11210},
journal = {ACS Applied Materials & Interfaces},
pages = {4894--4902},
title = {Quasi two-dimensional dye-sensitized In2O3 phototransistors for ultrahigh responsivity and photosensitivity photodetector applications},
url = {http://dx.doi.org/10.1021/acsami.5b11210},
volume = {8},
year = {2016}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼10(6) and a responsivity value of up to 2 × 10(3) A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.
AU  - Mottram,AD
AU  - Lin,YH
AU  - Pattanasattayavong,P
AU  - Zhao,K
AU  - Amassian,A
AU  - Anthopoulos,TD
DO  - 10.1021/acsami.5b11210
EP  - 4902
PY  - 2016///
SN  - 1944-8244
SP  - 4894
TI  - Quasi two-dimensional dye-sensitized In2O3 phototransistors for ultrahigh responsivity and photosensitivity photodetector applications
T2  - ACS Applied Materials & Interfaces
UR  - http://dx.doi.org/10.1021/acsami.5b11210
UR  - http://www.ncbi.nlm.nih.gov/pubmed/26863603
UR  - http://hdl.handle.net/10044/1/29770
VL  - 8
ER  -
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