Imperial College London
Alternate

ProfessorThomasAnthopoulos

Faculty of Natural Sciences, Department of Physics

Visiting Professor
 
 
 
//

Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
//

Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
//

Location

 

1111Blackett LaboratorySouth Kensington Campus

//

Summary

 

Publications

Citation

BibTex format

@article{Lin:2016:10.1002/aelm.201600070,
author = {Lin, YH and Thomas, SR and Faber, H and Li, R and McLachlan, MA and Patsalas, PA and Anthopoulos, TD},
doi = {10.1002/aelm.201600070},
journal = {Advanced Electronic Materials},
title = {Al-Doped ZnO Transistors Processed from Solution at 120 °C},
url = {http://dx.doi.org/10.1002/aelm.201600070},
volume = {2},
year = {2016}
}
Download

RIS format (EndNote, RefMan)

TY  - JOUR
AB  - A simple Al-doping method that is used to significantly enhance the operating characteristics of ZnO thin-film transistors processed from solution at temperatures down to 120 °C is reported. The two-step doping process relies on the dissolution of zinc oxide hydrate in ammonia hydroxide to form an aqueous Zn-ammine complex solution and the subsequent immersion of Al pellets into it at room temperature. The pellets are then removed, and the doped precursor solution is spin-coated onto the substrate followed by thermal annealing in air to form the n-doped ZnO:Al layers. By controlling the immersion time of the Al pellets in the precursor solution, the free electron concentration in ZnO can be tuned. The resulting ZnO:Al layers are shown to be polycrystalline with tuneable electrical properties. ZnO:Al-based transistors processed at 180 °C exhibit enhanced electron mobility when compared to intrinsic ZnO devices with the maximum values exceeding 5 cm2 V−1 s−1. Even when the process temperature is reduced to 120 °C, the ZnO:Al transistors retain their excellent operating characteristics with a maximum electron mobility of 3 cm2 V−1 s−1. This is amongst the highest values reported to date for soluton-deposited ZnO transistors processed at 120 °C in air.
AU  - Lin,YH
AU  - Thomas,SR
AU  - Faber,H
AU  - Li,R
AU  - McLachlan,MA
AU  - Patsalas,PA
AU  - Anthopoulos,TD
DO  - 10.1002/aelm.201600070
PY  - 2016///
SN  - 2199-160X
TI  - Al-Doped ZnO Transistors Processed from Solution at 120 °C
T2  - Advanced Electronic Materials
UR  - http://dx.doi.org/10.1002/aelm.201600070
VL  - 2
ER  -
Download