Imperial College London

MrAndreaMifsud

Faculty of EngineeringDepartment of Electrical and Electronic Engineering

Research Associate in Integrated Circuit Design
 
 
 
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Contact

 

a.mifsud Website

 
 
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Location

 

Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@inproceedings{Shen:2022:10.1109/iscas48785.2022.9937723,
author = {Shen, J and Mifsud, A and Xie, L and Alshaya, A and Papavassiliou, C},
doi = {10.1109/iscas48785.2022.9937723},
pages = {3537--3541},
publisher = {IEEE},
title = {A high-voltage characterisation platform for emerging resistive switching technologies},
url = {http://dx.doi.org/10.1109/iscas48785.2022.9937723},
year = {2022}
}

RIS format (EndNote, RefMan)

TY  - CPAPER
AB - Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuro-morphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a practical on-chip memristor-based system, it is essential to have the ability to apply large programming voltage ranges during the characterisation procedures for various memristor technologies. This work presents a 16x16 high voltage memristor characterisation array employing high voltage CMOS circuitry. The proposed system has a maximum programming range of ±22V to allow on-chip electroforming and I-V sweep. In addition, a Kelvin voltage sensing system is implemented to improve the readout accuracy for low memristance measurements. This work addresses the limitation of conventional CMOS-memristor platforms which can only operate at low voltages, thus limiting the characterisation range and integration options of memristor technologies.
AU - Shen,J
AU - Mifsud,A
AU - Xie,L
AU - Alshaya,A
AU - Papavassiliou,C
DO - 10.1109/iscas48785.2022.9937723
EP - 3541
PB - IEEE
PY - 2022///
SP - 3537
TI - A high-voltage characterisation platform for emerging resistive switching technologies
UR - http://dx.doi.org/10.1109/iscas48785.2022.9937723
UR - https://ieeexplore.ieee.org/document/9937723
UR - http://hdl.handle.net/10044/1/101212
ER -