IBE14G01

 

 

 

 

 

 

 

Technology : AMS 0.35μm 2P4M CMOS

Objectives :

• ISFET arrays for multi-sensing lab-on-chip platform.
• Silicon beta-cell cluster.
• EMG fatigue processor.

Designers : Ermis Koutsos, Sara Seyedeh Ghoreishizadeh, mohamed El-Sharkawy, Dora Ma, Nicolas Moser, Vlad Cretu and Pantelis Georgiou.