BibTex format

author = {Carey, T and Arbab, A and Anzi, L and Bristow, H and Hui, F and Bohm, S and Wyatt-Moon, G and Flewitt, A and Wadsworth, A and Gasparini, N and Kim, JM and Lanza, M and McCulloch, I and Sordan, R and Torrisi, F},
doi = {10.1002/aelm.202100112},
journal = {Advanced Electronic Materials},
title = {Inkjet printed circuits with 2D semiconductor inks for high-performance electronics},
url = {},
year = {2021}

RIS format (EndNote, RefMan)

AB - Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with 2D materials have the potential to enable the next generation of high performance low-cost printed digital electronics. Here, the authors demonstrate air-stable, low voltage (<5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2), and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating an average switching time of τMoS2 ≈ 4.1 μs for the MoS2 FETs. They achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. They then integrate MoS2 and IDT-BT FETs to realize inkjet-printed complementary logic inverters with a voltage gain |Av| ≈ 4 when in resistive load configuration and |Av| ≈ 1.4 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
AU - Carey,T
AU - Arbab,A
AU - Anzi,L
AU - Bristow,H
AU - Hui,F
AU - Bohm,S
AU - Wyatt-Moon,G
AU - Flewitt,A
AU - Wadsworth,A
AU - Gasparini,N
AU - Kim,JM
AU - Lanza,M
AU - McCulloch,I
AU - Sordan,R
AU - Torrisi,F
DO - 10.1002/aelm.202100112
PY - 2021///
SN - 2199-160X
TI - Inkjet printed circuits with 2D semiconductor inks for high-performance electronics
T2 - Advanced Electronic Materials
UR -
UR -
ER -