SPEAKER:
Professor Husam N. Alshareef, Materials Science & Engineering, King Abdullah University for Science & Technology (KAUST), Saudi Arabia
SYNOPSIS:
In this talk, we discuss recent work in our group on oxide thin film devices with an eye toward transparent electronic applications. In one part, we focus on devices based on the doped-ZnO system and show significant improvement in oxide mobility and transistor performance using low temperature processing.
In the second part, we discuss activities on p-type oxide semiconductor development, particularly SnO. Careful process optimization was carried out to establish a stable SnO film deposition process, which was subsequently used to fabricate thin-film transistors, nanowire transistors, CMOS devices, and a nonvolatile memory, all based on SnO channel layer.
Finally, recent promising results on the thermoelectric properties of oxides including thin films and superlattices are presented. In each of the above topics, we will show by example how engineering of the material microstructure and/or device interface can be used to tailor the resultant properties, achieving remarkable enhancement in both material and device performance.
1. J.A. Caraveo, P. Nayak, D. Granato, U. Schwingenschlogl, and H.N. Alshareef, ACS Nano 10, 5160 (2013).
2. H.A. Aljawhari, J.A. Caraveo-Frescas, and H.N. Alshareef, ACS Appl. Mater. Interfaces5 (19), 9615(2013)
3. D.B. Granato, J.A. Caraveo-Frescas, H.Alshareef, U. Schwingenschlogl, Appl. Phys. Letters 102, 212105 (2013).
4. J.A. Caraveo-Frescas and H.N. Alshareef, Applied Physics Letters 103, 222103 (2013)
5. J.A. Caraveo, P. Nayak, D. Granato, U. Schwingenschlogl, and H.N. Alshareef, ACS Nano 10, 5160 (2013).
6. A. M. Dehkordi, S. Bhattacharya, T. Darroudi, H.N. Alshareef, and T. M. Tritt, Chemistry of Materials, dx.doi.org/10.1021/cm4040853.
7. S.R.Kumar, MN. Hedhili, T.Tritt, and H.N. Alshareef, Chemistry of Materials, 26 (8), pp 2726-2732(2014).
8. P. Nayak, A. Caraveo, and H.N. Alshareef, ACS Nano (under review).
9. A, I. Abutaha, S.R. Sarath Kumar, HN Alshareef, J. Mat. Chem. A (accepted)