Abstract:
Atomically thin crystals of MoS2 exhibit a board range of properties which make them interesting for basic research as well as optical and electronic applications. Other than graphene, these crystals exhibit a thickness dependent band gap and the success in the growth via chemical vapor deposition has opened up prospects for large scale implementation in electronic and optoelectronic devices. We investigate the electronic transport properties of CVD grown and exfoliated MoS2. While at low charge carrier density the transport is dominated by variable range hopping via localized states, we focus on the transport properties at higher Fermi energies. To reach these higher doping levels, we apply carefully in situ annealing as well as top gating. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures