Tom Wu, Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
Abstract
Transition metal oxides exhibit rich phase diagrams and exotic physical properties as a result of strong correlations between charge, spin, orbital and lattice. The recent advances of thin film technology allow the synthesis of high-quality epitaxial oxide heterostructures with control at the unit cell level, which enables exploring rich physics and opportunities for future technologies. As a notable example, interesting transport phenomena like 2D electron conduction and orbital reconstruction were discovered at the polar-nonpolar LaAlO3/SrTiO3 (LAO/STO) interface. In this talk, I will first discuss an interface-based nonvolatile resistive switching device, where the alteration of the electronic configuration and the creation of gap states within the ultrathin LAO layer underpin the memory operation. Then I will discuss our recent results on the interface-based field effect device with double layer ionic electrolyte as the top gate. The electrostatic gating results indicate the manifestation of Kondo effect and two-dimensional insulator-to-metal transition at the oxide interface where the transport has an inhomogeneous and percolative nature. Our results underscore the general and significant role of dynamic ionic species and charge/spin inhomogeneity in dictating the physical properties of oxide interfaces.
Speaker:
Dr. Tom Wu received his B.S. degree from Zhejing University in 1995 and Ph.D. from the University of Maryland, College Park in 2002. Before joining KAUST in Feb., 2013 as an Associate Professor, he worked in Argonne National Laboratory in Chicago and Nanyang Technological University in Singapore. Dr. Wu has authored/co-authored more than 140 papers in the broad areas of oxide materials and their emergent physical properties. He also contributes as an academic editor for AIP Advances and a regular reviewer for many journals. As an independent PI in his career, Dr. Wu managed to secure more than 6 million USD in research funding. He has been invited to give about 70 talks in conferences and universities worldwide. He is also the awardee of Lee Hsun International Young Scientist Lectureship from Chinese Academy of Sciences in 2012. His research group focuses on designing and synthesizing oxide thin films, nanomaterials and heteostructures, exploring their emergent physical properties, and constructing novel devices in the areas of spintronics, multiferroics, resistive switching memory, and field effect transistors.
Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
Abstract:
Transition metal oxides exhibit rich phase diagrams and exotic physical properties as a result of strong correlations between charge, spin, orbital and lattice. The recent advances of thin film technology allow the synthesis of high-quality epitaxial oxide heterostructures with control at the unit cell level, which enables exploring rich physics and opportunities for future technologies. As a notable example, interesting transport phenomena like 2D electron conduction and orbital reconstruction were discovered at the polar-nonpolar LaAlO3/SrTiO3 (LAO/STO) interface. In this talk, I will first discuss an interface-based nonvolatile resistive switching device, where the alteration of the electronic configuration and the creation of gap states within the ultrathin LAO layer underpin the memory operation. Then I will discuss our recent results on the interface-based field effect device with double layer ionic electrolyte as the top gate. The electrostatic gating results indicate the manifestation of Kondo effect and two-dimensional insulator-to-metal transition at the oxide interface where the transport has an inhomogeneous and percolative nature. Our results underscore the general and significant role of dynamic ionic species and charge/spin inhomogeneity in dictating the physical properties of oxide interfaces.
Speaker:
Dr. Tom Wu received his B.S. degree from Zhejing University in 1995 and Ph.D. from the University of Maryland, College Park in 2002. Before joining KAUST in Feb., 2013 as an Associate Professor, he worked in Argonne National Laboratory in Chicago and Nanyang Technological University in Singapore. Dr. Wu has authored/co-authored more than 140 papers in the broad areas of oxide materials and their emergent physical properties. He also contributes as an academic editor for AIP Advances and a regular reviewer for many journals. As an independent PI in his career, Dr. Wu managed to secure more than 6 million USD in research funding. He has been invited to give about 70 talks in conferences and universities worldwide. He is also the awardee of Lee Hsun International Young Scientist Lectureship from Chinese Academy of Sciences in 2012. His research group focuses on designing and synthesizing oxide thin films, nanomaterials and heteostructures, exploring their emergent physical properties, and constructing novel devices in the areas of spintronics, multiferroics, resistive switching memory, and field effect transistors.