Probe of Coherent and Quantum States in Narrow-Gap Based Semiconductors with Strong Spin-Orbit Coupling
Giti A. Khodaparast
Department of Physics, Virginia Tech, Blacksburg, VA, 24061, USA
In light of the growing interest in spin-related phenomena and devices, there is now a renewed interest in the science and engineering of narrow gap semiconductors. They offer several scientifically unique electronic features such as a small effective mass, a large g-factor, a high intrinsic mobility, and large spin-orbit coupling effects. In addition, it has been demonstrated [1] that in narrow-gap semiconductors, electrons in crossed-field geometry, could have a “semirelativistic” behavior with an energy-momentum relation analogous to that for free electrons in vacuum.
Our studies have been focused on probing and controlling the coherent and quantum states in InSb based heterostructures and MOVPE grown narrow gap ferromagnetic semiconductors. The results of several time resolved and magneto-optical spectroscopy techniques, to provide insight into both the time scales and the nature of microscopic interactions in these material systems, will be discussed.
[1] W. Zawadzki et al, PRL, 55, P983 (1985)