Dr Mukul Kabir
Department of Physics, Indian Institute of Science Education and Research, Pune
The correlated interaction between dilute localized electrons with the itinerant conduction electrons gives rise to Kondo effect below sufficiently low temperature. Beyond the conventional impurity in metal systems, many artificial Kondo systems have been discovered in the last two decades. In sharp contrast to the artificial Kondo systems, I will discuss an intrinsic, robust and high-temperature Kondo state in two-dimensional semiconducting phosphorene based on density functional theory calculations at different levels of approximations. While absorbed in a thermodynamically stable lattice defect, Cr impurity triggers an electronic phase transition in phosphorene to provide conduction electrons, which strongly interact with the localized Cr moment. This manifests in an intrinsic Kondo state, where a multi-stage quenching of the impurity moment occurs in the temperature range 40-200 K. Further, along with a significantly small extension of Kondo cloud, the predicted Kondo state is shown to be robust under uniaxial strain and layer thickness, which greatly simplifies its future experimental realization.