In this section
@article{Ullmann:2001:10.1557/PROC-665-C7.5,
author = {Ullmann, A and Ficker, J and Fix, W and Rost, H and Clemens, W and McCulloch, I and Giles, M},
doi = {10.1557/PROC-665-C7.5},
journal = {Materials Research Society Symposium - Proceedings},
pages = {C7.5.1--C7.5.6},
title = {High performance organic field-effect transistors and integrated inverters},
url = {http://dx.doi.org/10.1557/PROC-665-C7.5},
volume = {665},
year = {2001}
}
TY - JOUR
AB - Integrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.
AU - Ullmann,A
AU - Ficker,J
AU - Fix,W
AU - Rost,H
AU - Clemens,W
AU - McCulloch,I
AU - Giles,M
DO - 10.1557/PROC-665-C7.5
EP - 5
PY - 2001///
SN - 0272-9172
SP - 7
TI - High performance organic field-effect transistors and integrated inverters
T2 - Materials Research Society Symposium - Proceedings
UR - http://dx.doi.org/10.1557/PROC-665-C7.5
VL - 665
ER -