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Journal articleGriggs S, Marks A, Bristow H, et al., 2021,
n-Type organic semiconducting polymers: stability limitations, design considerations and applications
, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 9, Pages: 8099-8128, ISSN: 2050-7526- Cite
- Citations: 241
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Journal articleGuo K, Wustoni S, Koklu A, et al., 2021,
Rapid single-molecule detection of COVID-19 and MERS antigens via nanobody-functionalized organic electrochemical transistors
, NATURE BIOMEDICAL ENGINEERING, Vol: 5, Pages: 666-677, ISSN: 2157-846X- Cite
- Citations: 324
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Journal articleKhan JI, Alamoudi MA, Chaturvedi N, et al., 2021,
Organic Solar Cells: Impact of Acceptor Quadrupole Moment on Charge Generation and Recombination in Blends of IDT‐Based Non‐Fullerene Acceptors with PCE10 as Donor Polymer (Adv. Energy Mater. 28/2021)
, Advanced Energy Materials, Vol: 11, ISSN: 1614-6832 -
Journal articleKhan J, Alamoudi MA, Chaturvedi N, et al., 2021,
Impact of Acceptor Quadrupole Moment on Charge Generation and Recombination in Blends of IDT-Based Non-Fullerene Acceptors with PCE10 as Donor Polymer
, ADVANCED ENERGY MATERIALS, Vol: 11, ISSN: 1614-6832- Cite
- Citations: 42
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Journal articleZhang T, Moser M, Scaccabarozzi A, et al., 2021,
Ternary organic photodetectors based on pseudo–binaries nonfullerene–based acceptors
, Journal of Physics: Materials, Vol: 4, Pages: 1-8, ISSN: 2515-7639The addition of a third component to a donor:acceptor blend is a powerful tool to enhance the power conversion efficiency of organic solar cells. Featuring a similar operating mechanism, organic photodetectors are also expected to benefit from this approach. Here, we fabricated ternary organic photodetectors, based on a polymer donor and two nonfullerene acceptors, resulting in a low dark current of 0.42 nA cm−2 at −2 V and a broadband specific detectivity of 1012 Jones. We found that exciton recombination in the binary blend is reduced in ternary devices due to the formation of a pseudo-binary microstructure with mixed donor–acceptor phases. With this approach a wide range of intermediate open-circuit voltages is accessible, without sacrificing light-to-current conversion. This results in ternary organic photodetector (TOPD) with improved Responsivity values in the near-infrared. Moreover, morphology analyses reveal that TOPD devices showed improved microstructure ordering and consequentially higher charge carrier mobilities compared to the reference devices.
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Journal articleIsikgor FH, Furlan F, Liu J, et al., 2021,
Concurrent cationic and anionic perovskite defect passivation enables 27.4% perovskite/silicon tandems with suppression of halide segregation
, JOULE, Vol: 5, Pages: 1566-1586, ISSN: 2542-4351- Cite
- Citations: 195
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Journal articleMoser M, Gladisch J, Ghosh S, et al., 2021,
Controlling Electrochemically Induced Volume Changes in Conjugated Polymers by Chemical Design: from Theory to Devices
, ADVANCED FUNCTIONAL MATERIALS, Vol: 31, ISSN: 1616-301X- Cite
- Citations: 47
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Journal articleKoklu A, Wustoni S, Musteata V-E, et al., 2021,
Microfluidic Integrated Organic Electrochemical Transistor with a Nanoporous Membrane for Amyloid-β Detection
, ACS NANO, Vol: 15, Pages: 8130-8141, ISSN: 1936-0851- Cite
- Citations: 97
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Journal articleCarey T, Arbab A, Anzi L, et al., 2021,
Inkjet printed circuits with 2D semiconductor inks for high-performance electronics
, Advanced Electronic Materials, ISSN: 2199-160XAir-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with 2D materials have the potential to enable the next generation of high performance low-cost printed digital electronics. Here, the authors demonstrate air-stable, low voltage (<5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2), and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating an average switching time of τMoS2 ≈ 4.1 μs for the MoS2 FETs. They achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. They then integrate MoS2 and IDT-BT FETs to realize inkjet-printed complementary logic inverters with a voltage gain |Av| ≈ 4 when in resistive load configuration and |Av| ≈ 1.4 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
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Journal articleTan STM, Giovannitti A, Melianas A, et al., 2021,
High-Gain Chemically Gated Organic Electrochemical Transistor
, ADVANCED FUNCTIONAL MATERIALS, Vol: 31, ISSN: 1616-301X- Cite
- Citations: 85
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Journal articleMoser M, Wadsworth A, Gasparini N, et al., 2021,
Challenges to the Success of Commercial Organic Photovoltaic Products
, ADVANCED ENERGY MATERIALS, Vol: 11, ISSN: 1614-6832- Cite
- Citations: 98
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Journal articleSurgailis J, Savva A, Druet V, et al., 2021,
Mixed Conduction in an N-Type Organic Semiconductor in the Absence of Hydrophilic Side-Chains
, ADVANCED FUNCTIONAL MATERIALS, Vol: 31, ISSN: 1616-301X- Cite
- Citations: 119
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Journal articleIqbal HF, Ai Q, Thorley KJ, et al., 2021,
Suppressing bias stress degradation in high performance solution processed organic transistors operating in air
, NATURE COMMUNICATIONS, Vol: 12- Cite
- Citations: 93
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Journal articleChen X, Marks A, Paulsen BD, et al., 2021,
<i>n</i>‐Type Rigid Semiconducting Polymers Bearing Oligo(Ethylene Glycol) Side Chains for High‐Performance Organic Electrochemical Transistors
, Angewandte Chemie, Vol: 133, Pages: 9454-9459, ISSN: 0044-8249<jats:title>Abstract</jats:title><jats:p>N‐type conjugated polymers as the semiconducting component of organic electrochemical transistors (OECTs) are still undeveloped with respect to their p‐type counterparts. Herein, we report two rigid n‐type conjugated polymers bearing oligo(ethylene glycol) (OEG) side chains, PgNaN and PgNgN, which demonstrated an essentially torsion‐free π‐conjugated backbone. The planarity and electron‐deficient rigid structures enable the resulting polymers to achieve high electron mobility in an OECT device of up to the 10<jats:sup>−3</jats:sup> cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> range, with a deep‐lying LUMO energy level lower than −4.0 eV. Prominently, the polymers exhibited a high device performance with a maximum dimensionally normalized transconductance of 0.212 S cm<jats:sup>−1</jats:sup> and the product of charge‐carrier mobility <jats:italic>μ</jats:italic> and volumetric capacitance C* of 0.662±0.113 F cm<jats:sup>−1</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>, which are among the highest in n‐type conjugated polymers reported to date. Moreover, the polymers are synthesized via a metal‐free aldol‐condensation polymerization, which is beneficial to their application in bioelectronics.</jats:p>
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Journal articleChen X, Marks A, Paulsen BD, et al., 2021,
<i>n</i>-Type Rigid Semiconducting Polymers Bearing Oligo(Ethylene Glycol) Side Chains for High-Performance Organic Electrochemical Transistors
, ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, Vol: 60, Pages: 9368-9373- Cite
- Citations: 120
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