In this section
@article{Li:2008:10.1063/1.2927485,
author = {Li, FM and Dhagat, P and Haverinen, HM and McCulloch, I and Heeney, M and Jabbour, GE and Nathan, A},
doi = {10.1063/1.2927485},
journal = {APPLIED PHYSICS LETTERS},
title = {Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric},
url = {http://dx.doi.org/10.1063/1.2927485},
volume = {93},
year = {2008}
}
TY - JOUR
AU - Li,FM
AU - Dhagat,P
AU - Haverinen,HM
AU - McCulloch,I
AU - Heeney,M
AU - Jabbour,GE
AU - Nathan,A
DO - 10.1063/1.2927485
PY - 2008///
SN - 0003-6951
TI - Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric
T2 - APPLIED PHYSICS LETTERS
UR - http://dx.doi.org/10.1063/1.2927485
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000259010300077&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL - 93
ER -