BibTex format

author = {Hui, F and Liu, P and Hodge, S and Carey, T and Wen, C and Torrisi, F and Galhena, T and Tomarchio, F and Lin, Y and Moreno, E and Roldan, J and Koren, E and Ferrari, A and Lanza, M},
doi = {10.1002/smll.202101100},
journal = {Small},
title = {In-situ observation of low-power nano-synaptic response in graphene oxide using conductive atomic force microscopy},
url = {},
volume = {17},
year = {2021}

RIS format (EndNote, RefMan)

AB - Multiple studies have reported the observation of electro-synaptic response in different metal/insulator/metal devices; however, most of them analysed large (>1 µm2) devices that do not meet the integration density required by the industry (1010 devices/mm2). Some studies employed a scanning tunnelling microscope (STM) to explore nano-synaptic response in different materials, but in this setup there is a nanogap between the insulator and one of the metallic electrodes (i.e. the STM tip), which is not present in real devices. Here we show how to use a conductive atomic force microscope (CAFM) to explore the presence and quality of nano-synaptic response in confined areas <500 nm2. For this study, we selected graphene oxide (GO) due to its easy fabrication and excellent electrical properties. Our experiments indicate that metal/GO/metal nano-synapses exhibit potentiation and paired pulse facilitation with low write current levels <1 µA (i.e. power consumption ~3 μW), controllable excitatory post-synaptic currents and long-term potentiation and depression. Our results provide a new method to explore nano-synaptic plasticity at the nanoscale, and point GO as an important candidate material for the fabrication of ultra-small (<500 nm2) electronic synapses fulfilling the integration density requirements of neuromorphic systems.
AU - Hui,F
AU - Liu,P
AU - Hodge,S
AU - Carey,T
AU - Wen,C
AU - Torrisi,F
AU - Galhena,T
AU - Tomarchio,F
AU - Lin,Y
AU - Moreno,E
AU - Roldan,J
AU - Koren,E
AU - Ferrari,A
AU - Lanza,M
DO - 10.1002/smll.202101100
PY - 2021///
SN - 1613-6810
TI - In-situ observation of low-power nano-synaptic response in graphene oxide using conductive atomic force microscopy
T2 - Small
UR -
UR -
VL - 17
ER -